Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 41A
Rds On (Max) @ Id, Vgs 1.35 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100µA
Gate Charge (Qg) @ Vgs 54nC @ 10V
Input Capacitance (Ciss) @ Vds 3420pF @ 13V
Power - Max 3.6W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN