Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Rds On (Max) @ Id, Vgs 8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) @ Vds 490pF @ 25V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB