Transistor: N-MOSFET; unipolar; HEXFET; 40V; 409A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Rds On (Max) @ Id, Vgs 1.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA
Gate Charge (Qg) @ Vgs 460nC @ 10V
Input Capacitance (Ciss) @ Vds 14240pF @ 25V
Power - Max 375W
Mounting Type Through Hole
Package / Case TO-220-3