Transistor: N-MOSFET; unipolar; HEXFET; 200V; 25A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Rds On (Max) @ Id, Vgs 72.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) @ Vds 1710pF @ 50V
Power - Max 144W
Mounting Type Through Hole
Package / Case TO-220-3