Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.8A, 4.6A
Rds On (Max) @ Id, Vgs 27 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 10µA
Gate Charge (Qg) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) @ Vds 398pF @ 15V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)