MOSFET, P-CHANNEL, -30V, -12A, 11.9 MOHM, 25VGS, SO-8
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Rds On (Max) @ Id, Vgs 8.5 mOhm @ 12A, 20V
Vgs(th) (Max) @ Id 2.4V @ 25µA
Gate Charge (Qg) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) @ Vds 1680pF @ 25V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)