Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8.9A
Rds On (Max) @ Id, Vgs 18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 7.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 540pF @ 10V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)