Transistor: N-MOSFET x2; unipolar; HEXFET; 20V; 10
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A
Rds On (Max) @ Id, Vgs 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250µA
Gate Charge (Qg) @ Vgs 11nC @ 4.5V
Input Capacitance (Ciss) @ Vds 960pF @ 10V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)