Transistor: N-MOSFET; unipolar; 80V; 10A; 2.5W; SO
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Rds On (Max) @ Id, Vgs 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA
Gate Charge (Qg) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) @ Vds 1620pF @ 25V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)