Transistor: N-MOSFET; unipolar; HEXFET; 250V; 35A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 375A (Tc)
Rds On (Max) @ Id, Vgs 38 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 165nC @ 10V
Input Capacitance (Ciss) @ Vds 6714pF @ 25V
Power - Max 4.3W
Mounting Type Surface Mount
Package / Case -