Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8.6A (Tc)
Rds On (Max) @ Id, Vgs 15 mOhm @ 8.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 89nC @ 5V
Input Capacitance (Ciss) @ Vds 4300pF @ 15V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)