Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W;
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) @ Vds 520pF @ 25V
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)