Transistor: N-MOSFET; unipolar; 30V; 2.5A; 3W; SO8
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Rds On (Max) @ Id, Vgs 170 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) @ Vds 940pF @ 25V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)