Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
Rds On (Max) @ Id, Vgs 14 mOhm @ 11.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) @ Vgs 38nC @ 4.5V
Input Capacitance (Ciss) @ Vds 3529pF @ 10V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)