Transistor: N-MOSFET x2; unipolar; HEXFET; 20V; 6.
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.6A
Rds On (Max) @ Id, Vgs 29 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 27nC @ 4.5V
Input Capacitance (Ciss) @ Vds 900pF @ 15V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)