Transistor: N/P-MOSFET; unipolar; 30V; 4A; 1.4W; S
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A, 3A
Rds On (Max) @ Id, Vgs 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 25nC @ 4.5V
Input Capacitance (Ciss) @ Vds 520pF @ 15V
Power - Max 1.4W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)