Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; S
Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.6A
Rds On (Max) @ Id, Vgs 100 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)