Transistor: N/P-MOSFET; unipolar; HEXFET; 25V; 3.5
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 3.5A, 2.3A
Rds On (Max) @ Id, Vgs 100 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) @ Vds 330pF @ 15V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)