Transistor: N-MOSFET; unipolar; 25V; 210A; 89W; Di
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs 1.4 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA
Gate Charge (Qg) @ Vgs 68nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5790pF @ 13V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -