Transistor: N-MOSFET; unipolar; HEXFET; 25V; 34A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 34A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs 1.6 mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 2.4V @ 100µA
Gate Charge (Qg) @ Vgs 59nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5340pF @ 13V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -