Transistor: N-MOSFET; unipolar; 30V; 32A; 89W; Dir
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs 1.8 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250µA
Gate Charge (Qg) @ Vgs 71nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5970pF @ 15V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -