MOSFET, N, DIRECTFET, MP; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.3W; Transistor Case Style:DirectFET MP; No. of Pins:7; Operating Tem
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs 5.6 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1250pF @ 10V
Power - Max 2.3W
Mounting Type Surface Mount
Package / Case -