MOSFET, N, DIRECTFET, SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.2W; Transistor Case Style:DirectFET SQ; No. of Pins:7; Operating Tempe
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs 9.1 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) @ Vgs 17.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1460pF @ 15V
Power - Max 2.2W
Mounting Type Surface Mount
Package / Case -