Transistor: N-MOSFET; unipolar; 20V; 27A; 89W; Dir
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs 2.7 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA
Gate Charge (Qg) @ Vgs 42nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4130pF @ 10V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -