MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.45V; Power Dissipation Pd:2.8W; Transistor Case Style:DirectFET MX; No. of Pins:7; Operating T
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs 2.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA
Gate Charge (Qg) @ Vgs 57nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5040pF @ 10V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -