Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; Dir
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs 3.4 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) @ Vgs 63nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5950pF @ 15V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -