Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs 13 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) @ Vgs 18nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1420pF @ 10V
Power - Max 2.3W
Mounting Type Surface Mount
Package / Case -