Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 27A (Ta)
Rds On (Max) @ Id, Vgs 2.45 mOhm @ 27A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 100µA
Gate Charge (Qg) @ Vgs 195nC @ 4.5V
Input Capacitance (Ciss) @ Vds 8555pF @ 16V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)