Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta)
Rds On (Max) @ Id, Vgs 65 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 21nC @ 5V
Input Capacitance (Ciss) @ Vds 1230pF @ 15V
Power - Max 2.2W
Mounting Type Surface Mount
Package / Case -