Transistor: N-MOSFET; unipolar; 200V; 600mA; 2W; T
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
Rds On (Max) @ Id, Vgs 2.2 Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) @ Vgs 3.9nC @ 10V
Input Capacitance (Ciss) @ Vds 88pF @ 25V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.059", 1.50mm Width)