Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Rds On (Max) @ Id, Vgs 85 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) @ Vds 535pF @ 25V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.059", 1.50mm Width)