MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 2.6Milliohms;ID 220A;TO-262;PD 330W;gFS 75V
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Rds On (Max) @ Id, Vgs 3.3 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 290nC @ 10V
Input Capacitance (Ciss) @ Vds 7960pF @ 25V
Power - Max 300W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA