Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; T
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 57A (Tc)
Rds On (Max) @ Id, Vgs 23 mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 130nC @ 10V
Input Capacitance (Ciss) @ Vds 3130pF @ 25V
Power - Max 200W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA