Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 77A (Tc)
Rds On (Max) @ Id, Vgs 9 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 19nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1996pF @ 10V
Power - Max 87W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB