Transistor: N-MOSFET; unipolar; HEXFET; 60V; 79A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 79A (Tc)
Rds On (Max) @ Id, Vgs 8.4 mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) @ Vgs 69nC @ 10V
Input Capacitance (Ciss) @ Vds 2290pF @ 50V
Power - Max 110W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB