Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
Rds On (Max) @ Id, Vgs 1 Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 370µA
Gate Charge (Qg) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) @ Vds 850pF @ 100V
Power - Max 89W
Mounting Type Through Hole
Package / Case TO-220-3