MOSFET, N-CH, 600V, 20.2A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.171ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:151W; Transistor Case Style:TO-220; No. of Pins:3; Operat
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20.2A
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 630µ
Gate Charge (Qg) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) @ Vds 1750pF @ 100V
Power - Max 151W
Mounting Type Through Hole
Package / Case TO-220-3