Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 95A (Tc)
Rds On (Max) @ Id, Vgs 8.5 mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 130µA
Gate Charge (Qg) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) @ Vds 6660pF @ 50V
Power - Max 167W
Mounting Type Through Hole
Package / Case TO-220-3