MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):385mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-263; No. of Pins:3; Operating Temperature Max:150
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9A
Rds On (Max) @ Id, Vgs 385 mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 340µA
Gate Charge (Qg) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) @ Vds 790pF @ 100V
Power - Max 83W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB