Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 23.8A
Rds On (Max) @ Id, Vgs 160 mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 750µA
Gate Charge (Qg) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) @ Vds 1660pF @ 100V
Power - Max 176W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB