MOSFET, N-CH, 200V, 34A, TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Transistor Case Style:TO-263; No. of Pins:3; Operating T
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Rds On (Max) @ Id, Vgs 32 mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) @ Vds 2350pF @ 100V
Power - Max 136W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB