MOSFET, N CH, 100V, 100A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:3; Operatin
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 4.8 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) @ Vgs 176nC @ 10V
Input Capacitance (Ciss) @ Vds 11570pF @ 25V
Power - Max 300W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB