MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:214W; Transistor Case Style:TO-263; No. of Pins:7; Operat
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 160µA
Gate Charge (Qg) @ Vgs 117nC @ 10V
Input Capacitance (Ciss) @ Vds 8410pF @ 50V
Power - Max 214W
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB