Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Rds On (Max) @ Id, Vgs 125 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 152nC @ 20V
Input Capacitance (Ciss) @ Vds 2200pF @ 25V
Power - Max 180W
Mounting Type Through Hole
Package / Case TO-220-3