Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Rds On (Max) @ Id, Vgs 10 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 235nC @ 20V
Input Capacitance (Ciss) @ Vds 3750pF @ 25V
Power - Max 270W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA