Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Rds On (Max) @ Id, Vgs 140 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 7.5nC @ 10V
Input Capacitance (Ciss) @ Vds 310pF @ 25V
Power - Max 2.5W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA