Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 1.45A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 8.2nC @ 10V
Input Capacitance (Ciss) @ Vds 250pF @ 25V
Power - Max 23W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack