Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 550pF @ 25V
Power - Max 78W
Mounting Type Through Hole
Package / Case TO-220-3