Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 270mA (Tc)
Rds On (Max) @ Id, Vgs 9 Ohm @ 135mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) @ Vgs 5.5nC @ 10V
Input Capacitance (Ciss) @ Vds 150pF @ 25V
Power - Max 1.5W
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body