Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 13.6A (Tc)
Rds On (Max) @ Id, Vgs 110 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 6.4nC @ 5V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max 3.75W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA